2 edition of Evaluation of thick-film inks for solar cell grid metallization found in the catalog.
Evaluation of thick-film inks for solar cell grid metallization
Stephen J Hogan
by Solar Energy Research Institute, Available from National Technical Information Service in Golden, Colo, Springfield, VA
Written in English
|Statement||Steve Hogan, Kay Firor ; prepared for the U.S. Department of Energy|
|Series||SERI/TR -- 611-1186|
|Contributions||Firor, Kay, Solar Energy Research Institute, United States. Dept. of Energy|
|The Physical Object|
|Pagination||ix, 52 p. :|
|Number of Pages||52|
This book is the first comprehensive overview covering the different thin-film solar cell technologies: from the more “classical ones” (a-Si:H, CdTe, CIS) to the novel ones which are making their way from the lab to actual : Wiley. suited for low cost solar cells. We will shortly review the state-of-the-art of thin film solar cells in the next chapter. Next, one of the possible production methods will be presented: screen printing and sintering. The application of this technique to thin film CdTe solar cells then will be depicted in the next chapters. Size: KB.
The full text of this article hosted at is unavailable due to technical difficulties. A thin-film solar cell is a second generation solar cell that is made by depositing one or more thin layers, or thin film (TF) of photovoltaic material on a substrate, such as glass, plastic or metal. Thin-film solar cells are commercially used in several technologies, including cadmium telluride (CdTe), copper indium gallium diselenide (CIGS), and amorphous thin-film silicon (a-Si, TF-Si).
metallization of solar cells. Generic synthesis procedures were developed for all metallo-organic compoundsinvestigated. The results of this study led to a numberof conclusions. Silver neodecanoate was found to be the most suitable silver metallo-organic compoundfor use in thick film inks, but the quality of inks was found to be highly depen-. Through a standard screen-printed Ag paste metallization for c-Si solar cells, the Ag/Si contact via a glass phase medium in thickness of tens to hundreds nanometers was formed, as typically shown in figure 6(a). For the two Ag pastes, the dimension and structure of Ag/Si contact was basically the : Xinjie Sun, Shanshan Yao, Juanjuan Xing, Jiefeng Zhang, Yunxia Yang, Hongbo Li, Hua Tong, Xiao Yuan.
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Title: Evaluation of thick-film inks for solar cell grid metallization A study is described of commercially available thick-film conductor inks to determine their suitability for use as solar cell front electrical contacts.
-- A study is described of commercially available thick-film conductor inks to determine their suitability for use as solar cell front electrical contacts. By varying processing parameters such as. Regardless of ink composition, adjustment of processing parameters is necessary to optimize the performance of a thick-film solar cell contact.
The base metal conductor inks tested are found to be unsuitable for solar cell front metallization. The adhesion for typical thick film inks results from a glass frit in the ink that melts when the ink is fired, wets the surface of the substrate and hardens as the fired film cools.
For silver inks on silicon solar cells, the glass introduces a contact resistance at the Si-Ag by: In this dissertation, screen printed and fired thick film silver contacts for contacting phosphorus-doped emitters of crystalline silicon solar cells are characterized and evaluated.
Despite its apparent simplicity, thick film technology must be approached with great care when applied to optimize the processes and the performance of silicon solar cells.
/84/$ Elsevier Sequoia/Printed in The Netherlands 52 These considerations apply especially when a thick film metallization for th~ back contact is by: Narrow-width metallization therefore provides a clear route for approaching ideal electrode performance in thin-film solar cells.
These findings demonstrate the potential for scalable methods of incorporating thin metal wires into cell substrates to disrupt the transparent conductor landscape.
Silver ink experiments for silicon solar cell metallization by flexographic process Conference Paper (PDF Available) in Conference Record of the IEEE Photovoltaic Specialists Conference June. Metallization plays both optical and electrical roles in the performance of a solar cell.
Optically, the gridline width contributes to shading, which impacts the short circuit current. And electrically in the series resistance through contact and grid line resistances, which influences the fill factor. contact recombination and microstructure evaluation of screen printed and firing - through metallization konstanz,matthias hörteisFile Size: 1MB.
By optimizing contact metallization, electrical and optical losses of the solar cells can be reduced or controlled. Conventional and advanced silicon solar cell processes. The metal powder is spread on dielectric layer of a solar cell in a finger-grid pattern as shown in Fig. 9 (b).
Laser source is guided over the metal powder surface by continuous or short pulses which cause melting and adhesion to the Si surface which is beneath AR coatings of solar cell ( Cited by: It is therefore desirable to reduce the amount of silver in the front side grid of solar cells to a minimum.
This can either be achieved by using printing techniques that reduce the amount of silver pastes or by applying alternative metallization processes that require no silver at by: 6. Due to the sensitivity of the a-Si:H-based passivated contacts to annealing at temperatures above – °C (De Wolf and Kondo, ), the metallization scheme used for standard crystalline silicon solar cells cannot be applied to SHJ solar by: The 5th Metallization Workshop took place in Constance, Germany on 20 and 21 October and provided an overview of research and development in the field of solar cell metallization.
Figure shows a grid Line on each of the three cells of the Thick Film Ag Paste metallization system as follows: (a) C control cell, 40x magnification. (b) C after temperature cycles (°C to °C), 40x magnification.
(c) C after days humidity exposure (70°C at 98% relative humidity), 40x magnification. The process is readily automatable, and equipment with high throughput rates is available. Thus, screen printing results in reduced investment, tooling and labor costs. Silver is required for the front metallization grid, and additional savings result from application of Cited by: 3.
The metallization of solar cell has a vital role in contributed to cell performance and it also determines a considerable number of cell processing costs. On average, about 40% of expenses are associated with the pastes used for front-and rear-side metallization [ 1 ].Cited by: 3.
Dong-Youn Shin, Jun-Young Seo, Hyowon Tak and Doyoung Byun, Bimodally dispersed silver paste for the metallization of a crystalline silicon solar cell using electrohydrodynamic jet printing, Solar Energy Materials and Solar Cells, /,(), ().
Single Junction Microcrystalline Silicon Solar Cells Tandem Amorphous/Microcrystalline Silicon Solar Cells: The Micromorph Concept Conclusions References 5 Advanced Amorphous Silicon Solar Cell Technologies Miro Zeman Introduction Overview of Amorphous Silicon Solar Cell Technology Development and.
Review of Ni-Cu Based Front Side Metallization for c-Si Solar Cells. DOI: // An economic evaluation of front side metallization indicates process cost saving of more than 50% with Ni-Cu-Sn based layers.
“Effects of processing parameters on thick film inks used for solar cell front metallization,” Solar Cells, vol. Reactive silver inks for printing highly conductive features (> S/cm) at room temperature have been created.
These inks are stable, particle-free, and suitable for a wide range of patterning techniques. Upon annealing at 90 °C, the printed electrodes exhibit an electrical conductivity equivalent to that of bulk by: Chapter 4 Thin Film Solar Cells This c hapter starts with a brief o v erview ab out the curren t state-of-the-art of photo-v oltaic devices based on CuInS 2 absorb er la y ers.
Then, the curren t oltage beha vior of Cu(In 1−x Ga x)S 2 /CdS/ZnO hetero junctions based on the absorb er la y ers discussed in previous c.